EE 231 Solid State Devices

02:00-3:30 PM | 203 McLaughlin
Instructor Vivek Subramanian

EE 231: Solid State Devices - Spring 2006. Physical principles and operational characteristics of semiconductor devices. Emphasis is on MOS field-effect transistors and their behaviors dictated by present and probable future technologies. Metal-oxide-semiconductor systems, short-channel and high field effects, device modeling, and impact on analog, digital circuits. Lectures available as streaming video at webcast.berkeley.edu/courses.

 Lecture Archive

			Tue 1/17	Course Overview/Review of MOS Capacitors
			Thu 1/19	MOS Capacitants
			Tue 1/24	MOS Transistors
			Thu 1/26	MOSFET
			Tue 1/31	MOSFET (con't)
			Thu 2/2	Advanced MOSFET Issues
			Tue 2/7	Advanced MOSFET Issues (con't)
			Thu 2/9	Off and On State Effects
			Tue 2/14	Universal Mobility Curve and Velocity Saturation
			Thu 2/16	MOSFET Model (con't)
			Tue 2/21	Hot Carrier Effects
			Thu 2/23	Midterm
			Tue 2/28	Hot Carrier Effects (con't)
			Thu 3/2	Hot Carrier Effects (con't); ITRS
			Tue 3/7	International Technology Roadmap for Semiconductors
			Thu 3/9	Physics of Basic Oxide Reliability; High-K Dielectrics
			Tue 3/14	Oxides; MIdterm Design Project
			Thu 3/16	Gate Electrode Materials
			Tue 3/21	Advanced MOSFET Issues (con't)
			Thu 3/23	Strained Silicone
			Tue 3/28	Spring Break
			Thu 3/30	Spring Break
			Tue 4/4	Project Questions, SOI
			Thu 4/6	SOI (con't)
			Tue 4/11	Multiple-Gate MOSFIT
			Thu 4/13	Project Discussion
			Tue 4/18	Multiple Gate Devices; Memory
			Thu 4/20	No Lecture
			Tue 4/25	No Lecture
			Thu 4/27	Memory (con't)
			Tue 5/2	Memory (con't)
			Thu 5/4	No Lecture
			Tue 5/9	Memory and Displays